!j c/ u 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 repetitive avalanche and dv/dt rated hexfet transistors thru-hole (to-205af) product summary part number IRFF9110 bvdss -100v rds(on) 1.20 id -2.5a IRFF9110 100v, p-channel the hexfet transistors also feature all of the well established advantages of mosfets such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well suited for applications such as switch- ing power supplies, motor controls, inverters, chop- pers, audio amplifiers and high energy pulse circuits. features: ? repetitive avalanche ratings ? dynamic dv/dt rating ? hermetically sealed ? simple drive requirements ? ease of paralleling absolute maximum ratings ld@vgs = -10v.tc = 25c id@vgs = -iov,tc = iooc [dm pd @ tc = 25c vgs has iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current cd max. power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy & avalanche current ci repetitive avalanche energy 5 peak diode recovery dv/dt 1; operating junction storage temperature range lead temperature weight -2.5 -1.6 -10 15 0.12 20 87 ? ? -5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) units a w w/c v mj a mj v/ns c g nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFF9110 electrical characteristics @tj = 25c (unless otherwise specified) bvdss abvdss/atj rds(on) vgs(th) 9fe idss fess tess 03 % qad td(on) tr tdfoffl tf ls + ld qss coss qss parameter r\ n v / u temperature coefficient of breakdown voltage static drain-to-source on-state resistance gate threshold voltage forward transconductance zero gate voltage drain current gate-to-source leakage forward gate-to-source leakage reverse total gate charge gate-to-source charae gate-to-drain ('miller') charge turn-on delay time rise time turn-off delay time fall time total inductance input capacitance output capacitance reverse transfer capacitance min -iuu ? ? ? -2.0 0.8 ? ? ? 4.0 0.8 1.9 ? ? ? ? ? ? ? typ -0.10 ? ? ? ? ? ? ? ? ? ? ? ? ? ? 7.0 200 85 30 max ? 1.2 1.38 -4.0 ? -25 -250 -100 100 9.8 1.8 4.3 30 60 40 40 ? ? units v/c n v s(t5) ua na nc nh pf test conditions reference to 25c, id = -1.0ma vgs = -10v, lo = -1.6a 4, vgs=-10v, lo = -2.5a ? vds = vgs, id = -250ua vds > -15v, lds = -1-6a '5 vds=-80vvgs=ov vds = -8ov vgs = ov,tj = 125c vgs = -2ov vgs = 2ov vgs=-10v, id = -2.5a vds=-50v vdd = -5ov id = -2.5a, rg=7.5j measured from dram lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) vgs = ov,vds = -25v f = 1.0mhz source-drain diode ratings and characteristics is ism vsd kl qrr ton parameter continuous source current (body diode) pulse source current (body diode) 'i> diode forward voltage reverse recovery time reverse recovery charge forward turn-on time min ? ? ? ? ? typ ? ? ? ? ? max -2.5 -10 -5.5 200 4.0 units a v r6 mc test conditions tj = 25c, is =-2.5a, vgs = 0v 8) tj = 25c, if = -2.5a, di/dt < -100a/us vdd ^ -50v ? intrinsic turn-on time is negligible. turn-on speed is substantially controlled by ls + ld- thermal resistance rthjc rthja parameter junction-to-case junction-to-ambient min ? typ ? max 8.3 175 units c/w test conditions typical socket mount
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